BONDING PAD OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A bonding pad of a semiconductor device and a method for forming the same are provided to prevent a dishing phenomenon in a CMP(Chemical Mechanical Polishing) process by forming a dummy pattern formed with oxide on a pad pattern. CONSTITUTION: A pad pattern(100) is formed on a semiconductor substrate. A dummy pattern(102) is formed on the pad pattern(100). The pad pattern(100) is formed with Cu. The dummy pattern is formed with oxide. An interlayer dielectric(104) is formed on the resultant. A contact(106) is formed on the interlayer dielectric(104) in order to connect the pad pattern(100) with the pad pattern(100) of an upper portion. A dishing phenomenon is not generated on the pad pattern(100) since the dummy pattern(102) is formed with the oxide. A contact hole of a center portion of the pad pattern(100) is connected with the contact(106).