| 发明名称 |
Electric semiconductor p-nu junction devices and method of producing them |
| 摘要 |
Alloys suitable for use in the manufacture of semi-conductor devices (see Group XXXVI) are the binary eutectic alloys of bismuth and gold and of lead and gold, and the ternary eutectic alloy containing 75% by weight of lead, 17% of gold and 8% of antimony. |
| 申请公布号 |
US2931960(A) |
申请公布日期 |
1960.04.05 |
| 申请号 |
US19580711405 |
申请日期 |
1958.01.27 |
| 申请人 |
SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT |
发明人 |
HERLET ADOLF;HOFFMANN ARNULF |
| 分类号 |
B23K35/26;H01L21/00;H01L21/60;H01L29/00 |
主分类号 |
B23K35/26 |
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