| 摘要 |
The depletion N-channel transistor has a drain region formed in a circular shape and a gate region having a circular-shaped contour, disposed therein surrounding the drain region. A source region is disposed outside the gate region, surrounding the drain region and spaced a predetermined distance away from an element-isolating oxide film. For instance, a P+ diffused layer is formed outside the source region, and the P+ diffused layer spaces the source region a predetermined distance away from the element-isolating oxide film. In the P+ diffused layer is formed a contact hole 10 that is common to the P+ diffused layer and the source region, and the gate region and the drain region are disposed concentrically with each other.
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