| 摘要 |
A method for forming a gate structure is provided. The forming method includes steps of providing a semiconductor substrate; forming an insulation layer, a first gate conductor layer, a second gate conductor layer, and a masking layer on the semiconductor substrate; removing portions of the masking layer, the semiconductor substrate, and the first gate conductor layer to define the gate structure by etching; executing a cleaning process to the semiconductor with a specific cleaning agent for etching the second gate conductor layer, thereby removing portions of the second gate conductor layer in the gate structure; and performing a thermal treatment process to the semiconductor substrate and forming an insulation spacer on the side surface of the gate structure.
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