Semiconductor device having a buried layer for reducing latchup and a method of manufacture therefor

摘要

The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device may include a well doped with a P-type dopant located over a semiconductor substrate. The semiconductor device may further include a buried layer including the P-type dopant located between the well and the semiconductor substrate, and a gate located over the well.