FIELD EFFECT TRANSISTOR USING SHARP METAL-INSULATOR TRANSITION

摘要

PURPOSE: A field effect transistor is provided to manifest metallic characteristic even though low density of hole is added by using sharp metal- insulator transition. CONSTITUTION: A LaTiO3(LTO) Mott transistor(410) is placed on a SrTiO3(STO) substrate(400). A Ba1-xSrxTiO3(BSTO) ferroelectric layer(420) is formed on a portion of the LTO Mott insulator. A gate electrode(430) is formed on the BSTO ferroelectric layer to apply a voltage. As a voltage is applied to the BSTO ferroelectric layer, holes are poured into the LTO Mott transistor so that abrupt metal-insulator transition occurs in it to form a conducting channel(415). A source and drain electrode(440,450) are formed on the first and second surface of the LTO Mott transistor respectively.