| 摘要 |
PURPOSE: To provide a semiconductor integrated circuit in which timing of a circuit does not change and irregularity of driving capability is not generated when a potential of a retaining substrate is fixed. CONSTITUTION: This method comprises a process for forming a contact hole in a source body connecting region of a transistor which hole penetrates a semiconductor film and a buried insulating film on a retaining substrate and reaches a part of the substrate, a process for forming a thermal oxide film, a process for forming a second conductivity type impurity region reaching the buried insulating film on the semiconductor film in a region for forming a first conductivity type transistor, a process for forming a second conductivity type impurity region in a part on the retaining substrate which faces the second conductivity type impurity region to the insulating film, and a process for etching an interlayer insulating film to be in a size which is concentric with the contact hole and surrounds it. |
