| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent damage of the first plug layer caused by etching of a conductive layer for forming the second plug layer in pre-plug poly process. CONSTITUTION: After word lines(32) are formed on a substrate(31), the first interlayer dielectric layer(33) having the first contact holes is formed thereon and the first plug layer(34) is formed in the first contact holes. Then, a silicide layer(36) is formed above the first plug layer(34) to prevent the first plug layer(34) from being damaged. Next, the second interlayer dielectric layer having the second contact holes is formed thereon, and bit lines(37) are formed in and over the second contact holes. An insulating layer is then formed thereon and etched back along with the second interlayer dielectric layer to form bit line sidewalls(38). Next, the conductive layer is formed thereon and selectively etched to form the second plug layer(39). Thereafter, the third interlayer dielectric layer(40) is formed.
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