发明名称 BI-LAYER SILICON FILM AND METHOD OF FABRICATION
摘要 <p>A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.</p>
申请公布号 WO2003023859(A1) 申请公布日期 2003.03.20
申请号 US2002028392 申请日期 2002.09.05
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址