Triple self-aligned split-gate non-volatile memory device

摘要

A method for fabricating a triple self-aligned non-volatile memory device is disclosed. The method includes forming isolation oxide on a substrate. A plurality of floating gates are formed by depositing and self-aligning a first polysilicon layer to the isolation oxide. A common source area is then defined on the substrate between the floating gates. A second polysilicon layer is deposited over the common source area and self-aligned with respect to the isolation oxide. A third polysilicon layer is deposited adjacent to the plurality of floating gates. A plurality of select gates are then formed by self-aligning the third polysilicon layer to the isolation oxide. Furthermore, at least one drain area is defined on the substrate.