| 摘要 |
A semiconductor device comprising an SOI substrate fabricated by forming a silicon layer 3 on an insulating layer 2, a plurality of active regions 3 horizontally arranged in the silicon layer 3, and element isolating parts 5 having a trench-like shape which is made of an insulator 5 embedded between the active regions 3 in the silicon layer 3, wherein the insulating layer 2 has spaces 6 positioned in the vicinity of interfaces between the active regions and the element isolating parts 5, whereby it becomes possible to reduce fixed charges or holes existing on a side of the insulating layer in interfaces between the silicon layer and the insulating layer, which fixed charges or holes are generated in a process of oxidation for forming the insulating layer on a bottom surface of the silicon layer.
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