发明名称 Organometallic precursor for forming metal pattern
摘要 <p>Disclosed is an organometallic precursor for forming a metal pattern, having a structure defined by the following Formula 1, and a method of forming the metal pattern using the same, in which the conductive metal pattern is readily formed through an exposing step without using a photo-resist. &lt;DF&gt;Formula 1 L'-M-L &lt;/DF&gt; wherein, M is a transition metal selected from the group consisting of Ag, Au, Cu, Pd, Ni, and Pt; L is an imidazolylidene compound having a structure defined by the following Formula 2; and L' is an imidazolylidene compound having a structure defined by the following Formula 2 or a beta -diketonate compound having a structure defined by the following Formula 3: &lt;CHEM&gt; wherein, R1, R2, R3, and R4 are independently a hydrogen atom, or alkyl group, alkenyl group, alkynyl group, carboxyl group, alkoxy group, or ester group with 1 to 20 carbons, or aromatic hydrocarbon group with 6 to 20 carbons; and &lt;CHEM&gt; wherein, R5, R6, and R7 are independently a hydrogen atom, or alkyl group, alkenyl group, alkynyl group, carboxyl group, alkoxy group, or ester group with 1 to 20 carbons, or aromatic hydrocarbon group with 6 to 20 carbons.</p>
申请公布号 EP1293508(A1) 申请公布日期 2003.03.19
申请号 EP20020256192 申请日期 2002.09.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, MIN CHUL;BYUN, YOUNG HUN;HWANG, SOON TAIK;HWANG, EUK CHE
分类号 C07C49/92;G03F7/004;C07D233/04;C07F1/00;C07F1/08;C07F1/10;C07F15/00;C07F15/04;H01L21/027;H01L21/288;H05K3/10;(IPC1-7):C07F1/00 主分类号 C07C49/92
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