发明名称 METHOD FOR SELECTING WATER-SOLUBLE RESIN FOR FORMING FINE RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To select a water-soluble resin which can smoothly effect thermal shrinkage of a photoresist pattern by heat treatment and can easily be removed by washing with water after the heat treatment of the resist pattern as a water- soluble resin for forming a coating film for increasing fineness of resist patterning and to efficiently form a fine resist pattern. SOLUTION: When at least part of a photoresist pattern formed on a substrate is coated with a water-soluble resin, heat treatment is carried out to narrow the pattern space and the water-soluble resin is thoroughly removed to form a fine resist pattern, a water-soluble resin which can be thoroughly removed within 60 sec after the resin is tested by application to a photo-cured body of a resist film before the formation of the above resist pattern, heat treatment at 140 deg.C for 60 sec and washing with pure water at 23 deg.C is selected and used as the above water-soluble resin.
申请公布号 JP2003084448(A) 申请公布日期 2003.03.19
申请号 JP20010302553 申请日期 2001.09.28
申请人 TOKYO OHKA KOGYO CO LTD 发明人 SUGATA YOSHIKI;KANEKO FUMITAKE;TACHIKAWA TOSHIKAZU
分类号 G03F7/26;G03F7/40;H01L21/027;(IPC1-7):G03F7/26 主分类号 G03F7/26
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