发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
After a metal post 8 is formed on a semiconductor wafer 20, a groove 21 is formed in a first dicing step. The semiconductor wafer is resin-sealed by a rein layer R from its upper surface. The semiconductor wafer is ground from its lower surface to a depth reaching the bottom of the groove 21 so that the semiconductor wafer is divided into individual chips 20A. The resin layer is ground to expose the head of the metal post. After a solder ball is loaded on the metal post 8, the portion of the resin layer between adjacent chips 20A is diced in a second dicing step so that the individual chips 20A are separated from one another.
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申请公布号 |
US6534387(B1) |
申请公布日期 |
2003.03.18 |
申请号 |
US20000680613 |
申请日期 |
2000.10.06 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
SHINOGI HIROYUKI;TOKUSHIGE RYOJI;TAKAI NOBUYUKI |
分类号 |
H01L23/52;H01L21/301;H01L21/3205;H01L21/56;H01L21/60;H01L21/768;H01L21/78;H01L23/12;H01L23/31;(IPC1-7):H01L21/301 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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