发明名称 |
DRAM cell with high integration density |
摘要 |
A process for making a DRAM-type cell includes growing layers of silicon germanium and layers of silicon, by epitaxy from a silicon substrate; superposing a first layer of N+ doped silicon and a second layer of P doped silicon; and forming a transistor on the silicon substrate. The method also includes etching a trench in the extension of the transistor to provide an access to the silicon germanium layers relative to the silicon layers over a pre-set depth to form lateral cavities, and forming a capacitor in the trench and in the lateral cavities.
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申请公布号 |
US6534811(B2) |
申请公布日期 |
2003.03.18 |
申请号 |
US20020042506 |
申请日期 |
2002.01.09 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
SKOTNICKI THOMAS;MONFRAY STEPHANE;MALLARDEAU CATHERINE |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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