| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to reduce contact resistance by eliminating a native oxide layer on a contact interface and decreasing a crystal defect like a grain boundary. CONSTITUTION: A silicon substrate(11) is prepared. An insulation layer(23) is formed on the silicon substrate. A part of the insulation layer is selectively eliminated to form a contact hole exposing a part of the silicon substrate. An exposed portion of the silicon substrate under the contact hole is interface-treated by a process including at least a dry cleaning process and a hydrogen heat treatment process. A silicon plug including single crystal(25a) and polycrystalline silicon(25b) is formed on the exposed surface of the silicon substrate inside the contact hoe.
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