发明名称 SEMICONDUCTOR MEMORY, AND ITS DATA READ-OUT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory and its data read method which can output data stably by making data read paths for read operation in which request for a frequency characteristic is large differ from those of read operation in which request for a frequency characteristic is relatively small. SOLUTION: This device is constituted of a memory cell array, and a differential amplifier and a latch circuit in which for first waiting time operation, each of a pair of signal outputted from the memory cell array is latched an outputted responding to an enable-signal, for second waiting time operation, voltage difference of each of a pair of signal outputted from the memory cell array is amplified and outputted responding to an enable-signal. Therefore, waiting time operation requiring a high frequency characteristic is discriminated from waiting time operation requiring no high frequency characteristic relatively, data read error can be reduced by outputting data through different data read paths.
申请公布号 JP2003077278(A) 申请公布日期 2003.03.14
申请号 JP20020172817 申请日期 2002.06.13
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIN HEICHURU;BAE GENICHI
分类号 G11C11/409;G11C7/06;(IPC1-7):G11C11/409 主分类号 G11C11/409
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