发明名称 |
INSULATED GATE TRANSISTOR AND LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE FOR DISPLAY |
摘要 |
PROBLEM TO BE SOLVED: To rationalize/reduce a process of achieving cost reduction of liquid crystal image display where a low temperature poly silicon is used as a semiconductor element. SOLUTION: By rationalizing a scanning line forming and an island forming step of semiconductor layers and by making interlayer dielectrics unnecessary, a four-mask process is developed. Making the resistance of signal lines low and the passivation are easily performed by using plating. |
申请公布号 |
JP2003077933(A) |
申请公布日期 |
2003.03.14 |
申请号 |
JP20010254346 |
申请日期 |
2001.08.24 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KAWASAKI KIYOHIRO |
分类号 |
G02F1/1335;G02F1/1368;H01L21/20;H01L21/28;H01L21/283;H01L21/3205;H01L21/336;H01L21/768;H01L23/522;H01L29/417;H01L29/786 |
主分类号 |
G02F1/1335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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