发明名称 INSULATED GATE TRANSISTOR AND LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE FOR DISPLAY
摘要 PROBLEM TO BE SOLVED: To rationalize/reduce a process of achieving cost reduction of liquid crystal image display where a low temperature poly silicon is used as a semiconductor element. SOLUTION: By rationalizing a scanning line forming and an island forming step of semiconductor layers and by making interlayer dielectrics unnecessary, a four-mask process is developed. Making the resistance of signal lines low and the passivation are easily performed by using plating.
申请公布号 JP2003077933(A) 申请公布日期 2003.03.14
申请号 JP20010254346 申请日期 2001.08.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAWASAKI KIYOHIRO
分类号 G02F1/1335;G02F1/1368;H01L21/20;H01L21/28;H01L21/283;H01L21/3205;H01L21/336;H01L21/768;H01L23/522;H01L29/417;H01L29/786 主分类号 G02F1/1335
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