发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR NON-VOLATILE MEMORY, MEMORY CARD, AND MICROCOMPUTER |
摘要 |
<p>A semiconductor integrated circuit comprising a high voltage output driver(1)using high voltage as operation power,and a switching circuit(2)for switching the output state of the high voltage output driver.The high voltage output driver has a series circuit of a first MOS transistor(M1)and a second MOS transistor(M2)having a series contact point as an output terminal in a high voltage current path.When the switching circuit switches complementary switch states of the first MOS transistor and the second MOS transistor,one transistor in ON state is turned to OFF state first,and then,the other transistor is turned to ON state.When this MOS transistor is turned to ON state,no breakdown occurs in the high voltage output driver because the through current path is already disconnected even if Vds exceeds the breakdown minimum voltage.</p> |
申请公布号 |
WO03021603(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
WO2002JP06709 |
申请日期 |
2002.07.03 |
申请人 |
HITACHI, LTD;HITACHI ULSI SYSTEMS CO., LTD.;FUJITO, MASAMICHI;NAKAMURA, YUKO;SUZUKAWA, KAZUFUMI;TANAKA, TOSHIHIRO;SHINAGAWA, YUTAKA |
发明人 |
FUJITO, MASAMICHI;NAKAMURA, YUKO;SUZUKAWA, KAZUFUMI;TANAKA, TOSHIHIRO;SHINAGAWA, YUTAKA |
分类号 |
G11C11/407;G06F15/78;G06K19/07;G11C7/10;G11C7/12;G11C8/08;G11C16/06;G11C16/08;(IPC1-7):G11C16/06;G11C11/413;G11C11/406 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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