Method to form a DRAM capacitor using low temperature reoxidation

摘要

An embodiment of the present invention teaches a capacitor dielectric in a wafer cluster tool for semiconductor device fabrication formed by a method by the steps of: forming nitride adjacent a layer by rapid thermal nitridation; and subjecting the nitride to an ozone ambient, wherein the ozone lo ambient is selected from the group consisting of an ambient containing an ultraviolet/ozone mixture, an ambient containing an ozone or an ambient containing an NF3/ozone mixture.