发明名称 |
SECONDARY ION ANALYZER, AND DEVICE FOR SPUTTERING ION BEAM |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a secondary ion analyzer capable of measuring easily emission angle dependency of a secondary ion, and an ion beam spattering device capable of forming easily thin films having various kinds of composition, or cluster thin films constituted of clusters having various kinds of composition and sizes. SOLUTION: This ion analyzer is a secondary ion mass spectrograph 11 provided with an ion gun 25 for emitting a primary ion beam toward a measured face 29 of a sample 15 held in a sample holder 17, and an analyzing part 27 for analyzing a secondary particle emitted from the sample 15. The sample 15 is rotated around an imaginary rotation axis passing through within the measured face 29 of the sample 15 as the center, in the sample holder 17. The ion gun 25 is arranged to make the primary ion beam pass through an orbit within one plane including the imaginary rotation axis, and the analyzing part 27 is arranged to analyze the secondary particle emitted perpendicularly to the imaginary rotation axis.</p> |
申请公布号 |
JP2003075378(A) |
申请公布日期 |
2003.03.12 |
申请号 |
JP20010270876 |
申请日期 |
2001.09.06 |
申请人 |
NAGOYA INDUSTRIAL SCIENCE RESEARCH INST |
发明人 |
TANEMURA MASAYUKI;HANDA NORIMASA;KINOSHITA NAOICHI;OKUYAMA FUMIO |
分类号 |
G01N23/225;C23C14/46;H01J37/252;H01J37/317;(IPC1-7):G01N23/225 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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