发明名称 METHOD AND APPARATUS FOR SPUTTERING
摘要 PROBLEM TO BE SOLVED: To provide a sputtering method, which reduces the number of samples made for confirming the relationship among film forming hours, film thickness and film resistance, and can reduce dummy substrates and man-hours for sample making, and provide a sputtering apparatus therefor. SOLUTION: The objective sputtering apparatus 101 has a mask 103 which is held by a shaft 102 so as to be rotatable through a rotational drive system (not shown), in a space between a target 3 and a substrate 5 to be treated, and which is used for forming a film on a dummy substrate 5b. The mask 103 has an opening 104 through which the sputtering treatment is performed, and has a structure which can either vary the position of the opening 104, or expand the area of the opening 104 step by step.
申请公布号 JP2003073823(A) 申请公布日期 2003.03.12
申请号 JP20010257785 申请日期 2001.08.28
申请人 NEC KANSAI LTD 发明人 MUNEMASA TOSHIAKI
分类号 C23C14/34;H01L21/203;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/34
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