RESISTIVE INTERSECTION ARRAY OF MEMORY CELL HAVING RESISTANCE TO SHORT CIRCUIT

摘要

PROBLEM TO BE SOLVED: To solve the problem relating to a short-circuited SDT junction in a resistive intersection memory array. SOLUTION: A data storage device (8) comprises the resistive intersection array (10) of a memory cell (12). Each memory cell has a memory element (50), and a conductive hard mask material (52) on the element (50). The device (8) can be made as a magnetic random access memory ('MRAM') device.