发明名称 |
MULTIBEAM SEMICONDUCTOR LASER ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser element where the light output of each beam is uniform and alignment is easy. SOLUTION: The multibeam semiconductor laser element 40 is a GaN-based multibeam semiconductor laser element having four laser stripes 42A to D for emitting laser beams with the same wavelength. Each laser stripe has a p-side common electrode 48 on a mesa 46 formed on a sapphire substrate 44, and has each of active regions 50A to D. Two n-side electrodes 52A and B are provided in a contact layer 54 by the mesa as a common counter electrode opposite to the p-side electrode 48. Distance A between the laser stripes 42A and 42D should be 100μm or less. Distance B1 between the laser stripe 42A and the laser side end section of the n-side electrode 52B should be 150μm or less, and distance B2 between the laser stripe 42D and the laser side end section of the n-side electrode 52B should be 150μm or less.
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申请公布号 |
JP2003069152(A) |
申请公布日期 |
2003.03.07 |
申请号 |
JP20020168293 |
申请日期 |
2002.06.10 |
申请人 |
SONY CORP |
发明人 |
TOJO TAKESHI;HINO TOMOKIMI;ANZAI SHINICHI;GOTO OSAMU;YABUKI YOSHIBUMI;UCHIDA SHIRO;IKEDA MASAO |
分类号 |
H01L21/205;H01S5/22;H01S5/323;(IPC1-7):H01S5/22 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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