LATERAL JUNCTION FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a lateral J-FET having a structure which can reduce the ON resistance while keeping high breakdown. SOLUTION: The basic structure of this lateral J-FET includes an n-type semiconductor layer 3 consisting of an n-type impurity region, and a p-type semiconductor layer 6 consisting of a p-type impurity region. Furthermore, this p-type semiconductor layer 6 comprises a p<+> -type gate region layer 7 which extends to the n-type semiconductor layer 3 and has a p-type impurity concentration higher than the impurity concentration of the n-type semiconductor layer 3, and an n<+> -type drain region 9 which is arranged keeping a prescribed interval from the p<+> -type gate region layer 7 and has an n-type impurity concentration higher than the impurity concentration of the n-type semiconductor layer 3.