发明名称 |
Electron beam lithography method for plating sub-100 nm trenches |
摘要 |
A lithography method for plating sub-100 nm narrow trenches, including providing a thin undercoat dissolution layer intermediate a seed layer and a resist layer, wherein the undercoat dissolution layer is relatively completely cleared off the seed layer by the developer solution such that the sides of the narrow trench will be generally vertical, particularly at the base of the narrow trench, thus facilitating plating the narrow trench with a high magnetic moment material
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申请公布号 |
US2003045110(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020108309 |
申请日期 |
2002.03.28 |
申请人 |
YANG XIAOMIN;ECKERT ANDREW ROBERT |
发明人 |
YANG XIAOMIN;ECKERT ANDREW ROBERT |
分类号 |
G11B5/187;G11B5/31;H01F41/34;(IPC1-7):H01L21/311 |
主分类号 |
G11B5/187 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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