发明名称 |
Semiconductor device |
摘要 |
A voltage applying section (32) is connected to a silicon substrate (1). Emission of radiation to a semiconductor device causes a large number of holes to accumulate within a BOX layer (2) in the vicinity of the interface with respect to a silicon layer (3). The amount of accumulation of holes increases with a lapse of time. A voltage applying section (32) applies a negative voltage which decreases with the lapse of time to the silicon substrate (1) in order to cancel out a positive electric field resulting from the accumulated holes. The voltage applying section (32) includes a time counter (30) for detecting the lapse of time and a voltage generating section (31) connected to the silicon substrate (1) for generating a negative voltage (V1) which decreases in proportion to the lapse of time based on the result of detection (time T) carried out by the time counter (30). Consequently, a semiconductor device capable of suppressing occurrence of total dose effects is obtained.
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申请公布号 |
US2003042543(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020199173 |
申请日期 |
2002.07.22 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIRANO YUUICHI;MATSUMOTO TAKUJI;YAMAGUCHI YASUO |
分类号 |
H01L21/28;H01L27/04;H01L27/12;H01L29/786;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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