SEMICONDUCTOR DEVICE HAVING HIGH-PERMITTIVITY INSULATION FILM AND PRODUCTION METHOD THEREFOR
摘要
A semiconductor device comprising a substrate, and an insulation film formed directly or indirectly on the substrate. The insulation film contains a metal silicate film, and a silicon concentration in the metal silicate film is higher at the film−thickness−direction center than at upper and lower portions thereof.
申请公布号
WO03019643(A1)
申请公布日期
2003.03.06
申请号
WO2002JP08453
申请日期
2002.08.22
申请人
NEC CORPORATION;WATANABE, HEIJI;ONO, HARUHIKO;IKARASHI, NOBUYUKI