| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film plasma treatment method and a thin film plasma treatment apparatus whereby the speed of treatment can be increased to effect a practical throughput and a reduced manufacturing cost. SOLUTION: The method comprises concentrically forming a roller in a cylindrical container, forming a plasma along the inside wall of the container in the space between the container and the roller, winding the substrate to be plasma-treated around the roller by at least one turn, and advancing the substrate while rotating the roller to carry out plasma treatment. The apparatus comprises a cylindrical container open at both ends, a high-frequency induced electromagnetic field generating coil 6 secured to the outer periphery of the container, an axially extending main roller 10 concentrically provided in the container and defining a discharge space 5 between the roller 10 and the container, a first guide roller 12 adjoining to one end of the roller 10 at a definite angle with the axial line of the roller 10 and guiding the substrate 11 to be treated onto the roller 10, and a second guide roller 13 adjoining to the other end of the roller 10 in parallel with the axial line of the roller 12 and guiding the winding of the plasma-treated substrate from the other end of the roller 10. |
