发明名称 |
Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection |
摘要 |
The present invention provides a semiconductor device that comprises a tub region located in a semiconductor substrate, wherein the tub region has a tub electrical contact connected thereto. The semiconductor device further comprises a trap charge insulator layer located on the first insulator layer and a control gate located over the trap charge insulator layer. The control gate has a gate contact connected thereto for providing a second bias voltage to the semiconductor device that, during programming, is opposite in polarity to that of the first bias voltage.
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申请公布号 |
US6528845(B1) |
申请公布日期 |
2003.03.04 |
申请号 |
US20000616569 |
申请日期 |
2000.07.14 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
BUDE JEFFREY D.;MCPARTLAND RICHARD J.;SINGH RANBIR |
分类号 |
H01L21/8247;G11C16/04;H01L21/336;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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