发明名称 |
CRYSTALLINE THIN FILM AND MANUFACTURING METHOD THEREFOR, ELEMENT USING THE CRYSTALLINE THIN FILM, CIRCUIT CONSTITUTED BY USING THE ELEMENT AND DEVICE INCLUDING THE ELEMENT OR THE CIRCUIT |
摘要 |
<p>PROBLEM TO BE SOLVED: To highly control crystal grain position in a crystalline thin film obtained by melting and resolidification. SOLUTION: A method for manufacturing the crystalline thin film comprises the steps of providing a small region 1 in a starting thin film 3, preferentially growing crystal grains 6 from the region 1 in melting and resolidifying by using a thin film 3, in which the size distribution of the crystal grains or a crystal cluster concentration is different from each other in the region 1 and a circumferential region 2, and controlling the positions of the grains of the thin film. Accordingly, the regions having different states from each other continuously coexist in a starting thin film, and hence the spatial position control of the crystal grains for constituting the thin film is easily realized.</p> |
申请公布号 |
JP2003059834(A) |
申请公布日期 |
2003.02.28 |
申请号 |
JP20020148604 |
申请日期 |
2002.05.23 |
申请人 |
CANON INC |
发明人 |
KUMOMI HIDEYA;KONDO SHIGEKI;MIZUTANI HIDEMASA |
分类号 |
G02F1/1368;C23C26/02;C30B13/00;C30B13/22;G02F1/1333;H01L21/20;H01L21/336;H01L29/786;H01L39/24;(IPC1-7):H01L21/20 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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