| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a wafer stage by which the temperature of a wafer as a substrate to be treated can be controlled uniformly and with high accuracy. SOLUTION: In the wafer stage 2, the semiconductor wafer is mounted so as to be held inside a plasma treatment apparatus. The wafer stage 2 is composed of a base substrate 26 which is equipped with a refrigerant passage used to make a refrigerant for temperature control flow, a stress relaxation member 28 which is installed on the side of a wafer mounting face of the base substrate 26 and whose coefficient of thermal expansion is smaller than that of the base substrate, a dielectric film 30 which is installed on side of the wafer mounting face on the stress relaxation material, and a flexure preventive member 29 which is installed on the side of a wafer nonmounting face on the base substrate and whose coefficient of thermal expansion is smaller than that of the base substrate.</p> |
