发明名称 |
Method for manufacturing bonded wafer |
摘要 |
A method for manufacturing a bonded wafer, in which when a bonded wafer is manufactured using an ion implantation separation method, impurities attached in the ion implantation step can be removed effectively, and less failure called a void is generated on the bonding surface. Impurities such as particles or organic substances attached in ion implantation step (c) are removed using a physical removal method (d). The surface of a first wafer (1) subjected to impurities removal is closely contacted onto the surface of a second wafer (2) for heat treatment (e). The first wafer is separated in a thin-film form at a micro bubble layer (f).
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申请公布号 |
US2003040163(A1) |
申请公布日期 |
2003.02.27 |
申请号 |
US20010926049 |
申请日期 |
2001.08.21 |
申请人 |
YOKOKAWA ISAO;MITANI KIYOSHI |
发明人 |
YOKOKAWA ISAO;MITANI KIYOSHI |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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