发明名称 METHOD FOR MANUFACTURING Mg-CONTAINING ITO SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a method for stably manufacturing a high-density Mg- containing ITO sputtering target at a low cost by which cracking during a manufacturing process can be suppressed and high yield can be attained. SOLUTION: This Mg-containing ITO sputtering target has a composition consisting essentially of In, Sn, Mg and O and can be manufactured by using a method wherein indium oxide powder, tin oxide powder and basic magnesium carbonate powder are mixed or indium oxide - tin oxide powder and basic magnesium carbonate powder are mixed, formed and sintered and the resultant sintered body is subjected to working.
申请公布号 JP2003055759(A) 申请公布日期 2003.02.26
申请号 JP20010243241 申请日期 2001.08.10
申请人 TOSOH CORP 发明人 TERAOKA HIDEKI;NAGASAKI YUICHI;KUROSAWA SATOSHI
分类号 C04B35/457;C23C14/34 主分类号 C04B35/457
代理机构 代理人
主权项
地址