发明名称 METHOD FOR PRODUCING HEXAFLUOROETHANE AND USE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide both a method for producing a high-purity texafluorothane usable as an etching gas or a cleaning gas in a production process for a semiconductor device and the use thereof. SOLUTION: This method for producing the hexafluoroethane comprises steps of reacting a mixed gas containing the hexafluoroethane and chlorotrifluoromethane with hydrogen fluoride in the presence of a fluorinating catalyst in the vapor phase at 200-450 deg.C and fluorinating the chlorotrifluoromethane.
申请公布号 JP2003055278(A) 申请公布日期 2003.02.26
申请号 JP20010238012 申请日期 2001.08.06
申请人 SHOWA DENKO KK 发明人 ONO HIROMOTO;OI TOSHIO
分类号 C07C17/395;C07B61/00;C07C17/383;C07C19/08;(IPC1-7):C07C17/395 主分类号 C07C17/395
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