发明名称 |
METHOD FOR PRODUCING HEXAFLUOROETHANE AND USE THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide both a method for producing a high-purity texafluorothane usable as an etching gas or a cleaning gas in a production process for a semiconductor device and the use thereof. SOLUTION: This method for producing the hexafluoroethane comprises steps of reacting a mixed gas containing the hexafluoroethane and chlorotrifluoromethane with hydrogen fluoride in the presence of a fluorinating catalyst in the vapor phase at 200-450 deg.C and fluorinating the chlorotrifluoromethane.
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申请公布号 |
JP2003055278(A) |
申请公布日期 |
2003.02.26 |
申请号 |
JP20010238012 |
申请日期 |
2001.08.06 |
申请人 |
SHOWA DENKO KK |
发明人 |
ONO HIROMOTO;OI TOSHIO |
分类号 |
C07C17/395;C07B61/00;C07C17/383;C07C19/08;(IPC1-7):C07C17/395 |
主分类号 |
C07C17/395 |
代理机构 |
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代理人 |
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地址 |
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