发明名称 Method of forming buried wiring, and apparatus for processing substratum
摘要 A method of forming a buried wiring comprising the steps of: (A) forming a wiring and a first insulating layer filled between the wirings on a substratum, (B) immersing the first insulating layer in a fluid which can dissolve the first insulating layer, to dissolve the first insulating layer into the fluid, (C) substituting, for the fluid, a raw material solution containing a raw material for forming a second insulating layer, without bringing the wiring into contact with a gas, and (D) filling a second insulating layer formed by gelation in the raw material solution at least between the wirings, and then, drying off the raw material solution, thereby to form the second insulating layer at least between the wirings.
申请公布号 US6524429(B1) 申请公布日期 2003.02.25
申请号 US20000652262 申请日期 2000.08.30
申请人 SONY CORPORATION;KABUSHIKI KAISHA KOBE SEIKO SHO 发明人 NOGAMI TAKESHI;KOMAI NAOKI;IKEDA KOICHI;KINOSHITA TAKASHI;SUZUKI KOHEI;KAWAKAMI NOBUYUKI;FUKUMOTO YOSHITO
分类号 H01L21/283;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/00 主分类号 H01L21/283
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