METHOD OF MANUFACTURING FLOATING GATE OF FLASH MEMORY CELL

摘要

PURPOSE: A method of manufacturing a floating gate of a flash memory cell is provided to form a spacer oxide film made of polymer at both sides of a ARC(anti-reflective coating) when etching the ARC formed on an upper portion of a conductive film, thereby simplifying a manufacturing process. CONSTITUTION: A tunnel oxide film(210) is formed at an upper portion of a semiconductor substrate(200). A conductive film(212) and a ARC are deposited in turn on an upper portion of the tunnel oxide film, and an etching pattern is then formed on an upper portion of the ARC. The reflection preventing film is etched using the etching pattern and etch gases as CHF3 or CHF4. The conductive film and the tunnel oxide film are etched using the etching pattern as an etching mask so that a part of the upper portion of the semiconductor substrate is exposed. The etching pattern, the ARC and the spacer oxide film are removed to form the floating gate.