发明名称 |
METHOD AND SYSTEM FOR WAFER-LEVEL TUNING OF BULK ACOUSTIC WAVE RESONATOR AND FILTER |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a bulk acoustic wave resonator from which a bulk acoustic wave device having a uniform operation frequency can be fabricated on a large substrate or wafer. SOLUTION: This invention relates to a method and a system for tuning the bulk acoustic wave resonator and a filter at a wafer level for correcting non-uniformity of thickness of a device to the non-uniformity of thickness of the device caused when a bulk acoustic wave device is fabricated on a large substrate or wafer, by using an etching mask having such non-uniformity of thickness as to correct the non-uniformity of the thickness.</p> |
申请公布号 |
JP2003050584(A) |
申请公布日期 |
2003.02.21 |
申请号 |
JP20020126693 |
申请日期 |
2002.04.26 |
申请人 |
NOKIA CORP |
发明人 |
ELLA JUHA;TIKKA PASI;KAITILA JYRKI |
分类号 |
H01L21/66;G10K11/04;H01L41/09;H01L41/18;H01L41/22;H03H3/04;H03H9/17;(IPC1-7):G10K11/04 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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