| 摘要 |
The invention concerns a method for obtaining a self-supported thin film made of a semiconductor material, supporting at least an electronic component and/or circuit (3) one of its surfaces, from a wafer (1) of said material, the latter including a front side (2), supporting or designed to support at least an electronic component and/or circuit (3) and a rear side (4'). Said method is characterised in that it comprises steps which consist in: a) implanting atomic species inside said wafer (1), from its rear side (4, 4'), so as to obtain a weakened zone (5) delimiting a front part (6) extending from said front side (2) to said weakened zone (5) and a rear part (7) formed by the rest of the wafer (1); d) removing said rear part (7), the front part (6); repeating, if required, steps a) and b) on the rear side of said front part (6) until the latter has the desired thickness for forming said self-supported thin film. |
