| 发明名称 |
METHOD OF INJECTING CHANNEL ION FOR IMPROVING ROBUSTNESS OF NMOS TRANSISTOR TO ESD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor that is hardly damaged by ESD. SOLUTION: This MOS transistor has a region having higher resistivity than the other regions in the p-type well. When an ESD phenomenon occurs, the region having the higher resistivity increases the current It2 which starts a thermal breakdown by destructive local heating by increasing the current gain of a parasitic lateral npn bipolar transistor.
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| 申请公布号 |
JP2003051581(A) |
申请公布日期 |
2003.02.21 |
| 申请号 |
JP20020159898 |
申请日期 |
2002.05.31 |
| 申请人 |
TEXAS INSTRUMENTS INC |
发明人 |
NADAKUMAR MAHALINGAM;ZHOA SONG |
| 分类号 |
H01L21/74;H01L21/336;H01L21/76;H01L21/822;H01L21/8234;H01L21/8238;H01L27/02;H01L27/04;H01L27/06;H01L27/088;H01L27/092;H01L29/10;H01L29/78;(IPC1-7):H01L27/06;H01L21/823 |
主分类号 |
H01L21/74 |
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