| 摘要 |
The semiconductor device includes a first chip having an electrically rewritable nonvolatile memory and a second chip having memories including a redundant circuit for repair. The first and second chips are provided on a substrate. Information required for utilizing the redundant circuit in place of a faulty portion in the memories on the second chip is stored in the nonvolatile memory on the first chip. When a faulty portion is detected in the memories on the second chip, the redundant circuit is utilized in place of the faulty portion based on the information stored in the nonvolatile memory.
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