| 摘要 |
<p>The present invention is directed to high frequency, high power or low noise devices such as low noise amplifiers, amplifiers operating at frequencies in the range of 1 GHz up to 400 GHz, radars, portable phones, satellite broadcasting or communication systems, or other devices and systems that use high electron mobility transistors, also called hetero-structure field-effect transistors. A high electron mobility transistor (60 and 80) includes a substrate (61), a quantum well structure (62) and electrodes (72 and 74). The high electron mobility transistor has a polarization-induced charge of high density. Preferably, the quantum well structure (62) includes an AIN buffer layer (64), an un-doped GaN layer (66), and an un-doped InAIN layer (68).</p> |
