发明名称 Method of manufacturing semiconductor element, and semiconductor element manufactured with this method
摘要 <p>When manufacturing semiconductor elements, a group of semiconductor elements having a diffraction grating formed partly on the side of the facet from which laser light is emitted is formed collectively on a semiconductor wafer by using semiconductor process technologies. The semiconductor laser elements are arranged such that the light emitting facets are opposite to each other to thereby form each diffraction grating of the semiconductor laser elements arranged opposite to each other as one diffraction grating, cleaving this diffraction grating at respective cleavage planes to cut out laser bars, followed by the cleavage of cleavage planes to cut out semiconductor laser elements. &lt;IMAGE&gt;</p>
申请公布号 EP1284529(A2) 申请公布日期 2003.02.19
申请号 EP20020001078 申请日期 2002.01.22
申请人 THE FURUKAWA ELECTRIC CO., LTD. 发明人 TSUKIJI, NAOKI;IRINO, SATOSHI
分类号 H01S5/12;H01S5/02;H01S5/028;H01S5/227;(IPC1-7):H01S5/02 主分类号 H01S5/12
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