发明名称 |
SOI transistor with polysilicon seed |
摘要 |
Short channel effects are effectively suppressed by steep impurity concentration gradients which can be placed with improved accuracy of location and geometry while relaxing process tolerances by implanting impurities in a polysilicon seed adjacent a conduction channel of a transistor and diffusing impurities therefrom into the conduction channel. The polysilicon seed also allows the epitaxial growth of polysilicon source/drain contacts therefrom having a configuration which minimizes current density and path length therein while providing further mechanical advantages.
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申请公布号 |
US6521949(B2) |
申请公布日期 |
2003.02.18 |
申请号 |
US20010848508 |
申请日期 |
2001.05.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ASSADERAGHI FARIBORZ;CHEN TZE-CHIANG;MULLER K. PAUL;NOWAK EDWARD J.;SHAHIDI GHAVAM G. |
分类号 |
H01L21/28;H01L21/336;H01L29/41;H01L29/78;H01L29/786;(IPC1-7):H01L27/01;H01L27/12;H01L31/039 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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