| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is free from a malfunction while implementing a wiring of low resistance using a Cu film with a high yield. SOLUTION: After a SiO2 film 103, a Si3 N4 film 104, and a second SiO2 film 105 are formed on a semiconductor substrate 101 provided with a low layer wiring 102, a via hole 106 and a wiring trench 107 are formed. Then, after the semiconductor substrate 101 is heated under decompression, the surface is exposed to SiH4 , and a CuSix layer 109 is formed on the bottom of the via hole 106, and a Si layer 110 is deposited on the surfaces of each insulation film. Then, after the surface of the semiconductor substrate 101 is exposed to TDMAT, a TiN film 112 is deposited on the CuSix layer 109, and a laminated structure of a TiSi layer 111 and the TiN film 112 is formed on the surface of the Si layer 110, a first Cu film 113 and a second Cu film 114 are deposited on the TiN film 112. Then. each metal film outside the wiring trench 107 is removed. |
