| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for measuring a carrier concentration of the silicon epitaxial layer by means of surface photovoltage technique in which the carrier concentration of a silicon epitaxial layer can be measured in a non-contact manner, speedily and easily, and further, the variation in fluctuation between days or in repeatability, etc., is small, for high reliability. SOLUTION: In the method for measuring the carrier concentration, where the carrier concentration of the silicon epitaxial layer grown on a silicon wafer is measured by means of the surface photovoltage technique, a depletion layer of maximum width is formed by applying an electric field on the surface of the silicon epitaxial wafer and the carrier concentration is obtained by measuring the maximum depletion layer width.
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