SEMICONDUCTOR LIGHT-DETECTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-detecting element having high detectability by reducing dark current. SOLUTION: A underlayer 12 constituting the semiconductor light-detector 20 is made of a nitride semiconductor including Al with a dislocation density 10<11> /cm<2> or below. Furthermore, an n-type conductive layer 13 and a p-type conductive layer 15 are made of a nitride semiconductor including Al by a smaller content than the nitride semiconductor and having a dislocation density 10<10> /cm<2> or below. In addition, a light-detecting layer 14 is similarly made of a nitride semiconductor including Al at a smaller content than the nitride semiconductor and having a dislocation density 10<10> /cm<2> or below.