| 摘要 |
PROBLEM TO BE SOLVED: To form a metallized wiring which can deal with a large size substrate. SOLUTION: At least one layer of conductive film is formed on an insulating surface, a resist pattern is formed thereon, and then the conductive film having the resist pattern is etched to form a metallized wiring having a tapering angle αcontrolled depending on the bias power density, ICP power density, temperature of a lower electrode, pressure, total flow rate of etching gas, and the ratio of oxygen or chlorine in the etching gas. In the metallized wiring thus formed, variation is suppressed in the width and length and a large size board can be dealt with sufficiently. |
