| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-luminance semiconductor light emitting device in which a migration is not generated even when Ag is used for a reflecting wall. SOLUTION: A conical through hole 11 is formed in the central part of an insulating substrate 10, and a semiconductor light emitting element 13 which is continuity-mounted on a submount element 12 is inserted into the through hole 11 from the lower part. The through hole 11 has a shape expanded toward the takeout direction of light, and its inner surface is used as the reflecting wall 14 formed by an Ag plating operation. Since the reflecting wall 14 is insulated from a p-electrode 15a and an n-electrode 15b which are connected to the element 13, a voltage is not applied to the electrodes, and an Ag migration is not generated. |
