发明名称 |
Plasma ashing process |
摘要 |
An oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate. The process includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to the reactive species. The process can be used with carbon and/or hydrogen based low k dielectric materials.
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申请公布号 |
US2003032300(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20010855177 |
申请日期 |
2001.05.14 |
申请人 |
WALDFRIED CARLO;BERRY IVAN;ESCORCIA ORLANDO;HAN QINGYUAN;SAKTHIVEL PALANI |
发明人 |
WALDFRIED CARLO;BERRY IVAN;ESCORCIA ORLANDO;HAN QINGYUAN;SAKTHIVEL PALANI |
分类号 |
H01L21/02;H01L21/311;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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